HAT1025R Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1025R
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–0.5
–0.4
–0.3
–0.2
I _D = –2 A
–0.1
–1 A –0.5 A
0
–2 –4 –6 –8 –10
Gate to Source Voltage V _GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1
0.5
0.2
0.1
0.05
V_GS = –2.5 V
–4 V
0.02
0.01
–0.2
–0.5 –1 –2 –5 –10 –20
Drain Current I _D (A)
Static Drain to Source on State Resistance
vs. Temperature
0.20
0.16
–1 A, –0.5 A
I D = –2 A
0.12
V_GS = –2.5 V
0.08
0.04
–4 V
–2 A, –1 A, –0.5 A
0
–40
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
20
10
Tc = –25 °C
5
25 °C
2
75 °C
1
0.5
0.2
–0.2
V _DS = –10 V
Pulse Test
–0.5 –1 –2 –5 –10 –20
Drain Current I _D (A)
4