HAT1025R Datasheet, PDF (5/9 Pages) Hitachi Semiconductor – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1025R
Body–Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
di / dt = 20 A / µs
V_GS = 0, Ta = 25 °C
5
–0.2 –0.5 –1 –2 –5 –10 –20
Reverse Drain Current I _DR (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
300
100
Ciss
Coss
Crss
30 _{VGS = 0}
f = 1 MHz
10
0
–4
–8 –12 –16 –20
Drain to Source Voltage V _DS (V)
Dynamic Input Characteristics
0
0
V_DD = –5 V
–10 V
–10
–20 V
–2
–20
V _DS
–30
V _DD = –20 V
–10 V
–5 V
–40
V GS
–4
–6
–8
–50
0
I D = –4.5 A _–10
4
8
12 16 20
Gate Charge Qg (nc)
Reverse Drain Current vs.
Souece to Drain Voltage
–20
–16
V_GS = –5 V
–12
0, 5 V
–8
–4
Pulse Test
0
–0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage V _SD (V)
5