HAT1021R Datasheet, PDF (6/9 Pages) Hitachi Semiconductor – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1021R
Reverse Drain Current vs.
Source to Drain Voltage
–50
Pulse Test
–40
V_GS = –5 V
–30
–20
0, 5 V
–10
0
–0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage V _SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
10
D=1
1
0.5
0.1 ^0.2
0.1
0.05
0.02
0.01 _0.01
0.001
1shot ^pulse
0.0001
10 µ 100 µ 1 m
θ _{ch – f(t) =} γ _{s (t) •} θ _{ch – f}
θ _{ch – f = 83.3 °C/W, Ta = 25 °C}
When using the glass epoxy board
(FR4 40x40x1.6 mm)
PDM
PW
T
D=
PW
T
10 m 100 m 1
10
Pulse Width PW (S)
100 1000 10000
6