HAT1021R Datasheet, PDF (2/9 Pages) Hitachi Semiconductor – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1021R
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Drain to source voltage
V_DSS
Gate to source voltage
V_GSS
Drain current
I_D
Drain peak current
I Note1
D(pulse)
Body–drain diode reverse drain current I_DR
Channel dissipation
Pch ^Note2
– 20
± 10
– 5.5
– 44
– 5.5
2.5
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V_(BR)DSS
Gate to source breakdown voltage V_(BR)GSS
Gate to source leak current
I _GSS
Zero gate voltege drain current
I _DSS
Gate to source cutoff voltage
V_GS(off)
Static drain to source on state
R_DS(on)
resistance
R_DS(on)
Forward transfer admittance
|y_fs|
Input capacitance
Ciss
– 20
± 10
—
—
– 0.5
—
—
6
—
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Turn-on delay time
t _d(on)
—
Rise time
t_r
—
Turn-off delay time
t _d(off)
—
Fall time
t_f
—
Body–drain diode forward voltage V_DF
—
Body–drain diode reverse
recovery time
t _rr
—
Note: 3. Pulse test
Typ Max Unit
—
—
V
—
—
V
—
± 10 µA
—
– 10 µA
—
– 1.5 V
0.048 0.060 Ω
0.065 0.085 Ω
9.5 —
S
1200 —
pF
630 —
pF
200 —
pF
20
—
ns
120 —
ns
175 —
ns
140 —
ns
– 0.9 – 1.4 V
65
—
ns
Test Conditions
I_D = – 10 mA, V_GS = 0
I_G = ± 100 µA, V_DS = 0
V_GS = ± 8 V, V_DS = 0
V_DS = – 20 V, V_GS = 0
V_DS = –10 V, I _D = – 1 mA
I_D = – 3 A, V_GS = – 4 V ^Note3
I_D = – 3 A, V_GS = – 2.5 V ^Note3
I_D = – 3 A, V_DS = – 10 V ^Note3
V_DS = – 10 V
V_GS = 0
f = 1MHz
V_GS = – 4 V, I_D = – 3 A
V_DD ≅ – 10 V
IF = – 5.5 A, V_GS = 0 ^Note3
IF = – 5.5 A, V_GS = 0
diF/ dt = 20 A/µs
2