HAT1021R Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1021R
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–0.5
Pulse Test
–0.4
–0.3
I _D = –5 A
–0.2
–0.1
–2 A
–1 A
0
–2 –4 –6 –8 –10
Gate to Source Voltage V _GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
0.2
0.1
0.05
0.02
V_GS = –2.5 V
–4 V
0.01
–0.2
–0.5 –1 –2 –5 –10 –20
Drain Current I _D (A)
Static Drain to Source on State Resistance
vs. Temperature
0.20
Pulse Test
0.16
0.12
–1 A, –2 A
I D = –5 A
0.08 ^{VGS = –2.5 V}
0.04
0
–40
–4 V
–1 A, –2 A, –5 A
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
50
20
Tc = –25 °C
10
75 °C
5
25 °C
2
1
0.5
–0.2
V DS = –10 V
Pulse Test
–0.5 –1 –2 –5 –10 –20
Drain Current I _D (A)
4