HAT1021R Datasheet, PDF (3/9 Pages) Hitachi Semiconductor – Silicon P Channel Power MOS FET High Speed Power Switching

Main Characteristics
HAT1021R
Power vs. Temperature Derating
4.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
3.0
2.0
1.0
0
50
100
150
200
Ambient Temperature Ta (°C)
–100
–30
–10
–3
–1
–0.3
–0.1
Maximum Safe Operation Area
10 µs
100 µs
OperatioDnCinOperatiPoWn(P=W1^{N<01o1mt0mess4s)}
this area is
limited by R _DS(on)
–0.03 _{Ta = 25 °C}
–0.01 ^{1 shot pulse}
–0.1 –0.3 –1 –3
–10 –30 –100
Drain to Source Voltage V DS (V)
Note 4 :
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
Typical Output Characteristics
–10 V –8 V –6 V
–50
–5 V
–4.5 V
–4 V
–40
Pulse Test
–3.5 V
–30
–3 V
–20
–2.5 V
–10
–2 V
V_GS = –1.5 V
0
–2 –4 –6 –8 –10
Drain to Source Voltage V _DS (V)
Typical Transfer Characteristics
–50
–40
Tc = –25 °C
25 °C
–30
75 °C
–20
–10
V _DS = –10 V
Pulse Test
0
–1 –2 –3 –4 –5
Gate to Source Voltage V GS (V)
3