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3SK317 Datasheet, PDF (6/8 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier
3SK317
Noise Figure vs. Drain to Source Voltage
10
VG2S = 3V
8
ID = 10mA
f = 900MHz
6
4
2
0
2
4
6
8
10
Drain to source voltage VDS (V)
Noise Figure vs. Drain Current
5
VDS = 6V
4
VG2S = 3V
f = 60MHz
3
2
1
0
4
8
12
16 20
Drain current I D (mA)
5 Noise Figure vs. Drain to Source Voltage
VG2S = 3V
4
I D= 10mA
f = 60MHz
3
2
1
0
2
4
6
8
10
Drain to source voltage VDS (V)
6