3SK317 Datasheet, PDF (2/8 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier

3SK317
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V_DS
V_G1S
V_G2S
I_D
Pch
Tch
Tstg
Electrical Characteristics (Ta = 25°C)
Ratings
Unit
14
V
±8
V
±8
V
25
mA
100
mW
150
°C
–55 to +150
°C
Item
Symbol Min
Drain to source breakdown voltage V_(BR)DSS 14
Gate1 to source breakdown
voltage
Gate2 to source breakdown
voltage
Gate1 to source cutoff current
V_(BR)G1SS ±8
V_(BR)G2SS ±8
I _G1SS
—
Gate2 to source cutoff current
I _G2SS
—
Gate1 to source cutoff voltage
V_G1S(off)
0
Gate2 to source cutoff voltage
V_G2S(off)
0
Drain current
I _DS(op)
4
Forward transfer admittance
|y_fs|
20
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Noise figure
Power gain
Noise figure
Noise figure
C_iss
2.4
C_oss
0.8
C_rss
—
PG
24
NF
—
PG
12
NF
—
NF
—
Typ Max Unit
—
—
V
—
—
V
—
—
V
—
±100 nA
—
±100 nA
0.2 1
V
0.3 1
V
8
14
mA
25
—
mS
3.1 3.5 pF
1.1 1.4 pF
0.021 0.04 pF
27.6 —
dB
1.0 1.5 dB
15.6 —
dB
3
4
dB
2.7 3.5 dB
Test Conditions
I_D = 200 µA
V_G1S = V_G2S = -3 V
I_G1 = ±10 µA
V_G2S = V_DS = 0
I_G2 = ±10 µA
V_G1S = V_DS = 0
V_G1S = ±6 V
V_G2S = V_DS = 0
V_G2S = ±6 V
V_G1S = V_DS = 0
V_DS = 10 V, V_G2S = 3 V
I_D = 100 µA
V_DS = 10 V, V_G1S = 3 V
I_D = 100 µA
V_DS = 6 V, V_G1S = 0.75 V
V_G2S = 3 V
V_DS = 6 V, V_G2S = 3 V
I_D = 10 mA , f = 1 kHz
V_DS = 6 V, V_G2S = 3 V
I_D = 10 mA , f = 1 MHz
V_DS = 6 V, V_G2S = 3 V
I_D = 10 mA , f = 200 MHz
V_DS = 6 V, V_G2S = 3 V
I_D = 10 mA , f = 900 MHz
V_DS = 6 V, V_G2S = 3 V
I_D = 10 mA , f = 60 MHz
2