3SK317 Datasheet, PDF (4/8 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier

3SK317
Forward Transfer Admittance vs.
Gate1 to Source Voltage
30
VDS= 6 V
f = 1kHz
3V
24
2.5 V
18
2V
12
1.5 V
6
1V
V_G2S = 0.5 V
0
0.4 0.8 1.2 1.6 2
Gate1 to source voltage V_G1S (V)
Power Gain vs. Drain Current
50
V_DS= 6 V
40
V_G2S= 3V
f = 200MHz
30
20
10
0
4
8
12 16 20
Drain current I _D (mA)
Noise Figure vs. Drain Current
5
V_DS= 6 V
4
V_G2S= 3V
f = 200MHz
3
2
1
0
4
8
12 16
20
Drain current I _D (mA)
Power Gain vs. Drain to Source Voltage
50
V_G2S= 3V
40
I _D = 10mA
f = 200MHz
30
20
10
0
2
4
6
8
10
Drain to source voltage V_DS (V)
4