3SK317 Datasheet, PDF (5/8 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier

Noise Figure vs. Drain to Source Voltage
5
V_G2S = 3V
4
I_D = 10mA
f = 200MHz
3
2
1
0
2
4
6
8
10
Drain to source voltage V_DS (V)
3SK317
Power Gain vs. Drain Current
20
16
12
8
V_DS = 6V
V_G2S = 3V
4
f = 900MHz
0
4
8
12
16 20
Drain current I_D (mA)
5 ^{Noise Figure vs. Drain Current}
4
3
2
1
V_DS = 6V
V_G2S = 3V
f = 900MHz
0
4
8
12
16 20
Drain current I _D (mA)
Power Gain vs. Drain to Source Voltage
20
16
12
8
V_G2S = 3V
4
I _D= 10mA
f = 900MHz
0
2
4
6
8
10
Drain to source voltage V_DS (V)
5