3SK296 Datasheet, PDF (6/9 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET

3SK296
S11 Parameter vs. Frequency
.8 ¹
.6
.4
.2
1.5
2
3
4
5
10
0
.2 .4 .6 .8 1.0 1.5 2 3 4 5 10
–10
–.2
–5
–4
–3
–.4
–2
–.6
–.8 _–1
–1.5
Condition: V_DS= 4 V , V _G2S = 3 V
I _D = 10 mA , Zo = 50 Ω
100 to 1000 MHz (50 MHz step)
S21 Parameter vs. Frequency
90° ^{Scale: 0.5 / div.}
120°
60°
150°
30°
180°
0°
–150°
–30°
–120°
–90°
–60°
Condition: V_DS= 4 V , V _G2S = 3 V
I _D = 10 mA , Zo = 50 Ω
100 to 1000 MHz (50 MHz step)
S12 Parameter vs. Frequency
90° ^{Scale: 0.002/ div.}
120°
60°
150°
30°
180°
0°
–150°
–30°
–120°
–90°
–60°
Condition: V_DS= 4 V , V _G2S = 3 V
I _D = 10 mA , Zo = 50 Ω
100 to 1000 MHz (50 MHz step)
S22 Parameter vs. Frequency
.8 ¹
.6
.4
.2
1.5
2
3
4
5
10
0
.2 .4 .6 .8 1.0 1.5 2 3 4 5 10
–10
–.2
–5
–4
–3
–.4
–2
–.6
–.8 _–1
–1.5
Condition: V_DS= 4 V , V _G2S = 3 V
I _D = 10 mA , Zo = 50 Ω
100 to 1000 MHz (50 MHz step)
6