3SK296 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET

3SK296
Silicon N-Channel Dual Gate MOS FET
Application
UHF RF amplifier
Features
• Low noise figure.
NF = 2.0 dB Typ. at f = 900 MHz
• Capable of low voltage operation
Outline
CMPAK–4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
ADE-208-388
1st. Edition