3SK296 Datasheet, PDF (3/9 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET

Maximum Channel Power
Dissipation Curve
200
150
100
50
0
50
100
150
200
Ambient Temperature Ta (°C)
3SK296
Typical Output Characteristics
20
V_G2S = 3 V
1.2 V
Pulse test
16
1.0 V
12
0.8 V
8
0.6 V
4
V_G1S = 0.4 V
0
2
4
6
8 10
Drain to source voltage V_DS (V)
Drain Current vs. Gate1 to Source Voltage
20
3.0 V
2.0 V
V_DS = 6 V
16 ^{2.5 V}
Pulse test
1.5 V
12
8
1.0 V
4
V_G2S = 0.5 V
0
1
2
3
4
5
Gate1 to source voltage V_G1S (V)
Drain Current vs. Gate2 to Source Voltage
20
2.0 V
1.5 V ^{VDS = 6 V}
Pulse test
16
1.0 V
12
8
4
V_G1S = 0.5 V
0
1
2
3
4
5
Gate2 to source voltage V_G2S (V)
3