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3SK296 Datasheet, PDF (5/9 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET | |||
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Noise Figure vs. Drain to Source Voltage
5
4
3
2
1
VG2S = 3 V
I D = 10 mA
f = 900 MHz
0
2
4
6
8 10
Drain to source voltage VDS (V)
3SK296
5
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