2SK1667 Datasheet, PDF (6/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1667
Reverse Drain Current vs. Source
to Drain Voltage
10
Pulse Test
8
6
4
V GS = 10 V
2
V GS = 0, – 5 V
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD(V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
1.0
0.5
0.3
0.2
0.1
0.1 0.05
0.02
0.03
0.01
10 µ
0.01
1 shot Pulse
100 µ
Tc = 25°C
1m
10 m
Pulse Width PW (S)
θ ch – c(t) = ^γ s(t) ^. θ ch – c
θ ch – c = 2.5°C / W, Tc = 25°C
P DM
D
=
PW
T
PW
T
100 m
1
10
6