2SK1667 Datasheet, PDF (5/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Body to Drain Diode Reverse
Recovery Time
500
200
100
50
20 di / dt = 100 A / µs
V _GS = 0, Ta = 25°C
10
5
0.2
0.5 1
2
5
10
20
Reverse Drain Current I_DR (A)
2SK1667
Typical Capacitance vs. Drain
Source Voltage
1000
Ciss
Coss
100
Crss
10
V GS = 0
f = 1 MHz
1
0
10
20
30
40
50
Drain to Source Voltage V_DS(V)
Dynamic Input Characteristics
500
20
ID = 7 A
400
16
V GS
300
V DS
200
200 V
100 V
VDD = 50 V
100
0
VDD = 200 V
100 V
50 V
8
16
24
32
Gate Charge Qg (nc)
12
8
4
0
40
Switching Characteristics
500
V GS = 10 V, VDD =.. 30 V
PW = 2 µ s, duty 1 %
200
100
td (off)
50
20
tr
10
tf
td (on)
5
0.1 0.2
0.5 1
2
Drain Current I D (A)
5 10
5