2SK1667 Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1667
Drain to Source Stauration Voltage
vs. Gate to Source Voltage
10
Pulse Test
8
6
ID = 10 A
4
5A
2
2A
0
4
8
12
16
20
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Temperature
2.0
1.6
Pulse Test
V GS = 10 V
1.2
ID = 10 A
5A
0.8
2A
0.4
0
– 40
0
40
80
120
160
Case Temperature Tc (°C)
Static Drain to Source on State Resistance
vs. Drain Current
5
Pulse Test
2
1
V GS = 10 V
0.5
15 V
0.2
0.1
0.05
0.2
0.5 1
2
5
Drain Current I D (A)
10 20
Forward Transfer Admittance
vs. Drain Current
50
20
Pulse Test
VDS = 10 V
10
5
– 25°C
25°C
Tc = 75°C
2
1
0.5
0.1 0.2
0.5 1
2
Drain Current ID (A)
5 10
4