2SK1667 Datasheet, PDF (3/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Power vs. Temperature Derating
80
60
40
20
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
10
10 V
6V
8
6
5.5 V
Pulse Test
5V
4
4.5 V
2
V _GS = 4 V
0
1
4
8
12
16
20
Drain to Source Voltage V_DS (V)
2SK1667
Maximum Safe Operation Area
100
Operation in this area
is limited by R _DS (on)
30
10
100
10
µ_s
µ_s
3
1
0.3
Ta = 25D°CC ^{OpPeWrat=io1n0(Tmcs=1(12m5s°shCo)t)}
0.1
1
3
10 30
100
300 1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
10
8 ^VDS ^{= 10 V}
Pulse Test
6
4
Tc = 75°C
2
25°C
– 25°C
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
3