2SK1579 Datasheet, PDF (6/8 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1579
Reverse Drain Current vs.
Sourse to Drain Voltage
5
Pulse Test
4
3
2
1 ^{VGS = 2 V}
V_GS = 0
0
0
1.0
2.0
Source to Drain Voltage V_SD (V)
Typical Capacitance vs.
Drain to Source Voltage
500
Coss
200
Ciss
100
Crss
50
20
10
V_GS = 0
f = 1 MHz
5
0.1 0.2 0.5 1 2
5 10
Drain to Source Voltage V_DS (V)
5,000
2,000
Switching Characteristics
V_GS = 4 V, V_DD = 10 V
PW = 2 µs, Duty cycle = 1%
1,000
500
t_{d (off)}
t_f
200
t_r
100
t_{d (on)}
50
0.05 0.1 0.2 0.5 1 2
5
Drain Current I_D (A)
6