2SK1579 Datasheet, PDF (3/8 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1579
Electrical Characteristics (Ta = 25°C unless otherwise specified.)
Item
Symbol Min
Drain to source cutoff current I_DSS
—
Gate to source cutoff current I_GSS
—
Gate to source cutoff voltage V_GS(off) 0.4
Drain to source on resistance R_DS(on)1 —
(1)
Drain to source on resistance R_DS(on)2 —
(2)
DC forward transfer admittance |yfs|
1
Input capacitance
Ciss —
Reverse transfer capacitance Crss —
Output capacitance
Coss —
Turn-on time
t _(on)
—
Turn-off time
t _(off)
—
Note 1. Marking is “DY”.
Typ Max Unit
—
1
µA
—
±5
µA
—
1.4
V
0.36 0.7
Ω
0.25 0.35 Ω
2.5
—
S
110 —
pF
30
—
pF
150 —
pF
500 —
ns
1500 —
ns
Test conditions
V_DS = 8 V, V_GS = 0
V_GS = ±6.5 V, V_DS = 0
V_DS = 5 V, I_D = 100 µA
V_GS = 2.2 V, I_D = 0.5 A
V_GS = 4 V, I_D = 1 A
V_DS = 5 V, I_D = 1 A,
∆V_GS = 0.1 V
V_DS = 5 V, V_GS = 0,
f = 1 MHz
I_D = 0.2 A, V_GS = 0,
Vin = 4 V, R_L = 51 Ω
3