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2SK1579 Datasheet, PDF (2/8 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET
2SK1579
Absolute Maximum Ratings (Ta = 25°C unless otherwise specified.)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel power dissipation
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Channel temperature
Tch
Storage temperature
Tstg
Notes 1. PW ≤ 100 µs, duty cycle ≤ 10%
2. Value on the almina ceramic board (12.5 × 20 × 0.7 mm)
Ratings
12
±7
2
4
2
1
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2