2SK1579 Datasheet, PDF (5/8 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Drain to Source on State Resistance
vs. Gate to Source Voltage
0.5
0.4
0.3
0.2
0.1
Ta = 25°C
Pulse Test
I_D = 0.1 A
0.2 A
0.5 A _{1 A}
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Temperature
1.0
Pulse Test
0.8
0.6 _{ID = 1 A}
0.5 A
0.4
I_D = 0.5 A
V_GS = 2 V
V_GS = 4 V
0.2
1A _2A
0
–25 0
25 50 75 100
Case Temperature T_C (°C)
2SK1579
Static Drain to Source on State
Resistance vs. Drain Current
5
Ta = 25°C
2 ^{Pulse Test}
1
2V
V_GS = 3 V
0.5
4V
0.2
0.1
0.05
0.2
0.5 1 2
5 10 20
Drain Current I_D (A)
Forward Transfer Admittance
vs. Drain Current
50
V_DS = 5 V
Pulse Test
20
10
Ta = –25°C
5
25°C
75°C
2
1
0.05
0.2
0.5 1 2
5 10 20
Drain Current I_D (A)
5