2SK1572 Datasheet, PDF (6/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1572
Body to Drain Diode Reverse
Recovery Time
500
200
100
50
20
di/dt = 100 A/µs, V_GS = 0
Ta = 25°C Pulse Test
10
5
0.05 0.1 0.2 0.5 1 2
5
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
500
20
400
V_DS
300
16
V_DD = 100 V
250 V
400 V ¹²
200
8
V_GS
100
V_DD = 400 V
4
250 V
I_D = 2 A
100 V
0
0
4
8
12 16 20
Gate Charge Qg (nc)
1,000
100
Typical Capacitance vs.
Drain to Source Voltage
Ciss
V_GS = 0
f = 1 MHz
Coss
10
Crss
1
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Switching Characteristics
500
V_GS
duty
=_<=110%V, ,VP_DW_{D =.=.}
2 µs
30 V
200
100
t_{d (off)}
50
t_f
20
t_r
10
t_{d (on)}
5
0.05 0.1 0.2 0.5 1 2
5
Drain Current I_D (A)
6