2SK1572 Datasheet, PDF (5/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Drain to Source Saturation Voltage
vs. Gate to Source Voltage
20
Pulse Test
16
12
I_D = 2 A
8
4
1A
0.5 A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Temperature
10
V_GS = 10 V
I_D = 2 A
1A
8 ^{Pulse Test}
0.5 A
6
4
2
0
–40
0
40 80 120 160
Case Temperature T_C (°C)
2SK1572
Static Drain to Source on State
Resistance vs. Drain Current
50
Pulse Test
20
10
V_GS = 10 V
5
15 V
2
1
0.5
0.05 0.1 0.2 0.5 1 2
5
Drain Current I_D (A)
Forward Transfer Admittance
vs. Drain Current
5
V_DS = 20 V
2 ^{Pulse Test}
1
Tc = –25°C
0.5
25°C
75°C
0.2
0.1
0.05 0.1 0.2 0.5 1 2
5
Drain Current I_D (A)
5