2SK1572 Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1572
Power vs. Temperature Derating
60
40
20
0
50
100
150
Case Temperature T_C (°C)
Typical Output Characteristics
5
Pulse Test
10 V
4
5V
4.5 V
3
2
4V
1
3.5 V
V_GS = 3 V
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Maximum Safe Operation Area
10
3
1
0.3
0.1
OpiserlaimtioitnedinbtyhiRs
a_D^r_S^e₍^a_on)
DC
10
POWpe=ra1ti0onm(sT_{C(11=mS2hs5o°1tC0P)0uµlsse)}
µ_s
0.03 Ta = 25°C
0.01
1 3 10 30 100 300 1,000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
5
4
V_DS = 20 V
Pulse Test
3
T_C = –25°C
25°C
75°C
2
1
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
4