2SK1401 Datasheet, PDF (6/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1401, 2SK1401A
Body to Drain Diode Reverse
Recovery Time
500
200
100
50
20
Pulse Test
10 di/dt = 100 A/µs, V_GS = 0
Ta = 25°C
5
0.2 0.5 1 2 5
10 20
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
500
20
400
300 ^VDS
200
V_DD = 300 V ¹⁶
200 V
100 V
12
V_GS
8
100
V_DD = 100 V
I_D = 15 A
4
200 V
300 V
0
0
20 40 60 80 100
Gate Charge Qg (nc)
10,000
Typical Capacitance vs.
Drain to Source Voltage
V_GS = 0
f = 1 MHz
Ciss
1,000
Coss
100
Crss
5
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Switching Characteristics
500
V_GS
duty
=
<=
110%V, ,VP_DW_{D =.=.}
2 µs
30 V
200
t_{d (off)}
100
50
20 ^tr
10
t_f
t_{d (on)}
5
0.2 0.5 1 2
5 10 20
Drain Current I_D (A)
6