2SK1401 Datasheet, PDF (3/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1401, 2SK1401A
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source
K1401 V_(BR)DSS 300
breakdown voltage K1401A
350
Gate to source breakdown
voltage
V_(BR)GSS ±30
Gate to source leak current
I _GSS
—
Zero gate voltage K1401 I_DSS
—
drain current
K1401A
Gate to source cutoff voltage V_GS(off) 2.0
Static drain to source K1401 R_DS(on) —
on state resistance K1401A
—
Forward transfer admittance |yfs|
6
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
t _d(on)
—
Rise time
t_r
—
Turn-off delay time
t _d(off)
—
Fall time
t_f
—
Body to drain diode forward V_DF
—
voltage
Body to drain diode reverse t_rr
—
recovery time
Note: 1. Pulse test
Typ Max
—
—
—
—
—
—
—
±10
—
250
—
3.0
0.25 0.35
0.30 0.40
9.5
—
1250 —
420 —
70
—
15
—
80
—
100 —
55
—
1.05 —
370 —
Unit
V
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I_D = 10 mA, V_GS = 0
I_G = ±100 µA, V_DS = 0
V_GS = ±25 V, V_DS = 0
V_DS = 240 V, V_GS = 0
V_DS = 280 V, V_GS = 0
I_D = 1 mA, V_DS = 10 V
I_D = 8 A, V_GS = 10 V *¹
I_D = 8 A, V_DS = 10 V *¹
V_DS = 10 V, V_GS = 0,
f = 1 MHz
I_D = 8 A, V_GS = 10 V,
R_L = 3.75 Ω
I_F = 15 A, V_GS = 0
I_F = 15 A, V_GS = 0,
di_F/dt = 100 A/µs
3