2SK1401 Datasheet, PDF (5/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Drain to Source Saturation Voltage
vs. Gate to Source Voltage
20
Pulse Test
16
12
I_D = 20 A
8
4
10 A
5A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Temperature
1.0
V_GS = 10 V
Pulse Test
0.8
I_D = 20 A
10 A
5A
0.6
0.4
0.2
0
–40 0
40 80 120 160
Case Temperature T_C (°C)
2SK1401, 2SK1401A
Static Drain to Source on State
Resistance vs. Drain Current
10
Pulse Test
5
2
V_GS = 10 V
1
0.5
15 V
0.2
0.1
0.5 1 2
5 10 20 50
Drain Current I_D (A)
Forward Transfer Admittance
vs. Drain Current
50
V_DS = 20 V
Pulse Test
20
10
T_C = 75°C
25°C
5
–25°C
2
1
0.5
0.2
0.5 1 2
5 10 20
Drain Current I_D (A)
5