2SK1401 Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1401, 2SK1401A
Power vs. Temperature Derating
120
80
40
0
50
100
150
Case Temperature T_C (°C)
Typical Output Characteristics
20
10 V
8V
6 V ^{5.5 V}
16
Pulse Test
12
5V
8
4.5 V
4
V_GS = 4 V
0
4
8
12 16 20
Drain to Source Voltage V_DS (V)
Maximum Safe Operation Area
100
30
10
3
1.0
OpiserlaimtioitnedinbtyhiRs
area
DS ^(on)
DC
PW
Ope=ra1ti0onms(T(1
C
1 _ms
=Sh2o5t°PCu)lse)
0.3
2SK1401
Ta = 25°C 2SK1401A
0.1
1 3 10 30 100 300 1,000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
20
V_DS = 20 V
Pulse Test
16
12
8
T_C = 75°C
4
25°C
–25°C
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
4