2SK1400 Datasheet, PDF (6/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1400, 2SK1400A
Body to Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
di/dt = 50 A/µs, V_GS = 0
Ta = 25°C
Pulse Test
5
0.2 0.5 1 2
5 10 20
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
500
20
400
V_DD = 50V
16
100 V
200 V
300
V_GS
12
200 ^VDS
8
100
200 V
I_D = 7 A
4
100 V
V_DD = 50 V
0
0
8
16 24 32 40
Gate Charge Qg (nc)
10,000
Static Drain-Source on State
Resistance vs. Drain Current
Ciss
1,000
Coss
100
Crss
V_GS = 0 V
f = 1 MHz
10
0
10
20 30 40 50
Drain to Source Voltage V_DS (V)
Switching Characteristics
500
V_GS = 10 V
V_DD
=•
•
30
V
PW = 2 µs, duty < 1%
200
100
t_{d (off)}
50
t_f
20
t_r
t_{d (on)}
10
5
0.1 0.2 0.5 1 2
5 10
Drain Current I_D (A)
6