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2SK1400 Datasheet, PDF (2/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET | |||
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2SK1400, 2SK1400A
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
2SK1400
2SK1400A
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ⤠10 µs, duty cycle ⤠1%
2. Value at TC = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
Unit
300
V
350
±30
V
7
A
28
A
7
A
50
W
150
°C
â55 to +150
°C
2
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