2SK1400 Datasheet, PDF (5/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
8
I_D = 10 A
6
4
5A
2
2A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Temperature
2.0
Pulse Test
1.6 _{VGS = 10 V}
1.2
0.8
10 A
5A
2A
0.4
0
–40 0
40 80 120 160
Case Temperature T_C (°C)
2SK1400, 2SK1400A
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
2
V_GS = 10 V
1
15 V
0.5
0.2
0.1
0.05
0.5 1.0 2
5 10 20 50
Drain Current I_D (A)
Forward Transfer Admittance
vs. Drain Current
50
V_DS = 20 V
Pulse Test
20
10
–25°C
5
T_C = 25°C
75°C
2
1
0.5
0.1 0.2 0.5 1 2
5 10
Drain Current I_D (A)
5