2SK1400 Datasheet, PDF (3/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1400, 2SK1400A
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source
K1400 V_(BR)DSS 300
breakdown voltage K1400A
350
Gate to source breakdown
voltage
V_(BR)GSS ±30
Gate to source leak current
I _GSS
—
Zero gate voltage K1400 I_DSS
—
drain current
K1400A
Gate to source cutoff voltage V_GS(off) 2.0
Static drain to source K1400 R_DS(on) —
on state resistance K1400A
—
Forward transfer admittance |yfs|
3.0
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
t _d(on)
—
Rise time
t_r
—
Turn-off delay time
t _d(off)
—
Fall time
t_f
—
Body to drain diode forward V_DF
—
voltage
Body to drain diode reverse t_rr
—
recovery time
Note: 1. Pulse test
Typ
—
—
—
—
—
—
0.50
0.60
5.0
635
230
40
10
50
60
40
1.0
240
Max
—
—
—
±10
250
3.0
0.70
0.80
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I_D = 10 mA, V_GS = 0
I_G = ±100 µA, V_DS = 0
V_GS = ±25 V, V_DS = 0
V_DS = 240 V, V_GS = 0
V_DS = 280 V, V_GS = 0
I_D = 1 mA, V_DS = 10 V
I_D = 4 A, V_GS = 10 V *¹
I_D = 4 A, V_DS = 10 V *¹
V_DS = 10 V, V_GS = 0,
f = 1 MHz
I_D = 4 A, V_GS = 10 V,
R_L = 7.5 Ω
I_F = 7 A, V_GS = 0
I_F = 7 A, V_GS = 0,
di_F/dt = 100 A/µs
3