2SK1296 Datasheet, PDF (6/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1296
Reverse Drain Current vs.
Source to Drain Voltage
50
Pulse Test
40
30
10 V
5V
20
10
V_GS = 0, –5 V
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1.0 ^{D = 1}
0.5
0.3 _0.2
0.1
0.1 _0.05
0.02
0.03 _{0.101Shot Pulse}
0.01
10 µ
100 µ
T_C = 25°C
1m
10 m
Pulse Width PW (s)
θch–c (t) = γs (t) · θch–c
θch–c = 1.67°C/W, T_C = 25°C
P_DM
TPW
D = ^PTW
100 m
1
10