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2SK1296 Datasheet, PDF (2/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET | |||
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2SK1296
Table 2 Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max Unit Test conditions
âââââââââââââââââââââââââââââââââââââââââââ
Drain to source breakdown
V(BR)DSS 60
â
â
V
ID = 10 mA, VGS = 0
voltage
âââââââââââââââââââââââââââââââââââââââââââ
Gate to source breakdown
voltage
V(BR)GSS ±20
â
â
V
IG = ±100 µA, VDS = 0
âââââââââââââââââââââââââââââââââââââââââââ
Gate to source leak current
IGSS
â
â
±10 µA VGS = ±16 V, VDS = 0
âââââââââââââââââââââââââââââââââââââââââââ
Zero gate voltage drain current IDSS
â
â
250 µA VDS = 50 V, VGS = 0
âââââââââââââââââââââââââââââââââââââââââââ
Gate to source cutoff voltage VGS(off)
1.0
â
2.0
V
ID = 1 mA, VDS = 10 V
âââââââââââââââââââââââââââââââââââââââââââ
Static drain to source on state RDS(on)
resistance
â
0.024 0.028 â¦
âââââââââââ
ID = 15 A, VGS = 10 V *
âââââââââââ
â
0.030 0.040
ID = 15 A, VGS = 4 V *
âââââââââââââââââââââââââââââââââââââââââââ
Forward transfer admittance |yfs|
17
27
â
S
ID = 15 A, VDS = 10 V *
âââââââââââââââââââââââââââââââââââââââââââ
Input capacitance
Ciss
â
2250 â
pF VDS = 10 V, VGS = 0,
ââââââââââââââââââââââââââââââââ
Output capacitance
Coss
â
1230 â
pF f = 1 MHz
ââââââââââââââââââââââââââââââââ
Reverse transfer capacitance Crss
â
300
â
pF
âââââââââââââââââââââââââââââââââââââââââââ
Turn-on delay time
td(on)
â
20
â
ns ID = 15 A, VGS = 10 V,
ââââââââââââââââââââââââââââââââ
Rise time
tr
â
125
â
ns RL = 2 â¦
ââââââââââââââââââââââââââââââââ
Turn-off delay time
td(off)
â
390
â
ns
ââââââââââââââââââââââââââââââââ
Fall time
tf
â
225
â
ns
âââââââââââââââââââââââââââââââââââââââââââ
Body to drain diode forward
VDF
voltage
â
1.3
â
V
IF = 30 A, VGS = 0
âââââââââââââââââââââââââââââââââââââââââââ
Body to drain diode reverse
trr
â
160
â
ns IF = 30 A, VGS = 0,
recovery time
diF/dt = 50 A/µs
âââââââââââââââââââââââââââââââââââââââââââ
* Pulse Test
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