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2SK1296 Datasheet, PDF (1/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET | |||
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2SK1296
Silicon N-Channel MOS FET
Application
High speed power switching
Features
⢠Low on-resistance
⢠High speed switching
⢠Low drive current
⢠4 V gate drive device
â Can be driven from 5 V source
⢠Suitable for motor drive, DC-DC converter,
power switch and solenoid drive
TOâ220AB
2
1
3
123
1. Gate
2. Drain
(Flange)
3. Source
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
âââââââââââââââââââââââââââââââââââââââââââ
Drain to source voltage
VDSS
60
V
âââââââââââââââââââââââââââââââââââââââââââ
Gate to source voltage
VGSS
±20
V
âââââââââââââââââââââââââââââââââââââââââââ
Drain current
ID
30
A
âââââââââââââââââââââââââââââââââââââââââââ
Drain peak current
ID(pulse)*
120
A
âââââââââââââââââââââââââââââââââââââââââââ
Body to drain diode reverse drain current IDR
30
A
âââââââââââââââââââââââââââââââââââââââââââ
Channel dissipation
Pch**
75
W
âââââââââââââââââââââââââââââââââââââââââââ
Channel temperature
Tch
150
°C
âââââââââââââââââââââââââââââââââââââââââââ
Storage temperature
Tstg
â55 to +150
°C
âââââââââââââââââââââââââââââââââââââââââââ
* PW ⤠10 µs, duty cycle ⤠1 %
** Value at TC = 25 °C
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