2SK1296 Datasheet, PDF (5/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1296
1000
500
200
100
50
Body to Drain Diode Reverse
Recovery Time
di/dt = 50 A/µs, Ta = 25°C
V_GS = 0
Pulse Test
20
10
0.5 1.0 2
5 10 20 50
Reverse Drain Current I_DR (A)
10000
1000
100
Typical Capacitance vs.
Drain to Source Voltage
Ciss
V_GS = 0
f = 1 MHz
Coss
Crss
10
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Dynamic Input Characteristics
100
20
V_DD = 100 V
80
25 V
16
50 V
60
12
V_GS
V_DS
40
8
20
V_DD = 50 V
25 V
4
I_D = 30 A
10 V
0
0
40 80 120 160 200
Gate Charge Qg (nc)
Switching Characteristics
500
t_{d (off)}
200
t_f
100
t_r
50
20
t_{d (on)}
10 ^{VGS = 10 V}
PW = 2 µs, duty < 1 %
5
0.5 1.0 2
5 10 20 50
Drain Current I_D (A)