HB289048C4 Datasheet, PDF (52/66 Pages) Hitachi Semiconductor – CompactFlash™

HB289048C4/289032C4/289016C4/289008C4
DC Characteristics-1 (Ta = 0 to +60˚C, V_CC = 5 V ± 10%, 3.3 V ± 5%)
Parameter
Symbol Min
Typ
Input leakage current I_LI
—
—
Output voltage
V_OL
—
—
V_OH
V_CC – 0.8 —
Note: 1. Except pulled up input pin.
Max
±1
0.4
—
Unit
µA
V
V
Test conditions
Vin = GND to V_CC
I_OL = 8 mA
I_OH = –8 mA
Note
1
3.3 V
5V
Parameter
Symbol Min
Typ
Max Min
Typ
Max Unit Test conditions
Input voltage V_IL
—
—
0.6
—
—
0.8
V
(CMOS)
V_IH
2.4
—
—
4.0
—
—
V
Input voltage V_IL
—
1.0
—
—
2.0
—
V
(Schmitt trigger)
V_IH
—
1.8
—
—
2.8
—
V
DC Characteristics-2 (Ta = 0 to +60˚C, V_CC = 5 V ± 10%, 3.3 V ± 5%)
Parameter
Sleep/standby
current
Sector read
current
Sector write
current
Symbol
I _SP1
3.3 V
5V
Typ Max Typ
0.3 0.5 0.5
I_CCR (DC) 25 50 40
I_CCR (Peak) 50 80 80
I_CCW (DC) 25 50 45
I_CCW (Peak) 50 80 80
Max Unit
1.0 mA
75 mA
120
75 mA
120
Test conditions
CMOS level (control signal = V_CC – 0.2 V)
(In Memory card mode and I/O card mode)
CMOS level (control signal = V_CC – 0.2 V)
during sector read transfer
CMOS level (control signal = V_CC – 0.2 V)
during sector write transfer
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