HAT1020R Datasheet, PDF (5/10 Pages) Hitachi Semiconductor – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1020R
Body–Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
di / dt = 20 A / µs
5
V_GS = 0, Ta = 25 °C
–0.2 –0.5 –1 –2 –5 –10 –20
Reverse Drain Current I _DR (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
300
100
Ciss
Coss
Crss
30
VGS = 0
10
f = 1 MHz
0 –10 –20 –30 -40 –50
Drain to Source Voltage V _DS (V)
Dynamic Input Characteristics
0
0
V _DD= –5 V
–10 V
–10
–25 V
–4
–20
V _DS
–30
–40
V GS
V _DD = –25 V
–10 V
–5 V
–50 ^{I D = –5 A}
0
8
16 24 32
Gate Charge Qg (nc)
–8
–12
–16
–20
40
Switching Characteristics
500
200
tr
100
tf
50
t _d(off)
20
t _d(on)
10 _{V GS = –4 V, V DD = –10 V}
5 ^{PW = 3 µs, duty < 1 %}
–0.1 –0.2 –0.5 –1 –2 –5 –10
Drain Current I _D (A)
5