HAT1020R Datasheet, PDF (1/10 Pages) Hitachi Semiconductor – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1020R
Silicon P Channel Power MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Capable of 4 V gate drive
• Low drive current
• High density mounting
Outline
ADE-208-435 H (Z)
9th. Edition
February 1999
SOP–8
8 ^{7 65}
56 7 8
DD D D
1 ²³⁴
4
G
SSS
12 3
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain