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HAT1020R Datasheet, PDF (4/10 Pages) Hitachi Semiconductor – Silicon P Channel Power MOS FET High Speed Power Switching | |||
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HAT1020R
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
â0.5
Pulse Test
â0.4
â0.3
I D = â5 A
â0.2
â0.1
â2 A
â1 A
0
â2 â4 â6 â8 â10
Gate to Source Voltage V GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
0.2
0.1
VGS = â4 V
0.05
â10 V
0.02
0.01
â0.2
â0.5 â1 â2 â5 â10 â20
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
0.20
Pulse Test
0.16
0.12
VGS = â4 V
0.08
I D = â5 A
â2 A, â1 A
0.04
0
â40
â10 V
â5 A, â2 A, â1 A
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
20
10
Tc = â25 °C
5
75 °C
2
25 °C
1
0.5
0.2
â0.2
V DS = â10 V
Pulse Test
â0.5 â1 â2 â5 â10 â20
Drain Current I D (A)
4
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