HAT1020R Datasheet, PDF (2/10 Pages) Hitachi Semiconductor – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1020R
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Drain to source voltage
V_DSS
Gate to source voltage
V_GSS
Drain current
I_D
Drain peak current
I Note1
D(pulse)
Body–drain diode reverse drain current I_DR
Channel dissipation
Pch ^Note2
– 30
± 20
–5
– 40
–5
2.5
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V_(BR)DSS
Gate to source breakdown voltage V_(BR)GSS
Gate to source leak current
I _GSS
Zero gate voltege drain current
I _DSS
Gate to source cutoff voltage
V_GS(off)
Static drain to source on state
R_DS(on)
resistance
R_DS(on)
Forward transfer admittance
|y_fs|
Input capacitance
Ciss
– 30
± 20
—
—
– 1.0
—
—
5.0
—
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Turn-on delay time
t _d(on)
—
Rise time
t_r
—
Turn-off delay time
t _d(off)
—
Fall time
t_f
—
Body–drain diode forward voltage V_DF
—
Body–drain diode reverse
recovery time
t _rr
—
Note: 3. Pulse test
Typ
—
—
—
—
—
0.04
0.07
7.5
860
560
165
30
170
40
65
– 0.9
55
Max
—
—
± 10
–10
– 2.5
0.07
0.13
—
—
—
—
—
—
—
—
– 1.4
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
I_D = –10 mA, V_GS = 0
I_G = ± 100 µA, V_DS = 0
V_GS = ± 16 V, V_DS = 0
V_DS = –30 V, V_GS = 0
V_DS = –10 V, I _D = – 1 mA
I_D = – 3 A, V_GS = – 10 V ^Note3
I_D = – 3 A, V_GS = – 4 V ^Note3
I_D = – 3 A, V_DS = – 10 V ^Note3
V_DS = – 10 V
V_GS = 0
f = 1MHz
V_GS = – 4 V, I_D = – 3 A
V_DD ≅ – 10 V
IF = – 5 A, V_GS = 0 ^Note3
IF = – 5 A, V_GS = 0
diF/ dt = 20 A/µs
2