2SK1838 Datasheet, PDF (5/8 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Body to Drain Diode Reverse
Recovery Time
1000
500
200
100
50
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
20
10
0.05 0.1 0.2
0.5 1
2
5
Reverse Drain Current IDR (A)
2SK1838(L), 2SK1838(S)
Typical Capacitance
vs. Drain to Sorce Voltage
1000
VGS = 0
f = 1 MHz
100
10
1
0
Ciss
Coss
Crss
10
20
30
40
50
Drain to Sourve Voltage V_DS (V)
Dynamic Input Characteristics
500
20
ID = 0.5 A
400
16
V GS
300
VDS
200
12
VDD = 200 V
100 V
50 V
8
100
VDD = 200 V
4
100 V
50 V
0
0
4
8
12
16
20
Gate Charge Qg (nc)
Switching Characteristics
100
VGS = 10 V,V DD =.. 30 V
PW = 2 µs, duty 1 %
50
tf
20 _{td (off)}
10
td (on)
5
tr
2
1
0.05 0.1 0.2
0.5 1
2
5
Drain Current I D (A)
5