2SK1838 Datasheet, PDF (2/8 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1838(L), 2SK1838(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25 °C
Symbol
V_DSS
V_GSS
I_D
I *¹
D(pulse)
I _DR
Pch*²
Tch
Tstg
Ratings
Unit
250
V
±30
V
1
A
2
A
1
A
10
W
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V_(BR)DSS 250
Gate to source breakdown
voltage
V_(BR)GSS ±30
Gate to source leak current
I _GSS
—
Zero gate voltage drain current I_DSS
—
Gate to source cutoff voltage V_GS(off) 2.0
Forward transfer admittance |y_fs|
0.3
Static drain to source on state R_DS(on) —
resistance
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
t _d(on)
—
Rise time
t_r
—
Turn-off delay time
t _d(off)
—
Fall time
t_f
—
Body to drain diode forward V_DF
—
voltage
Body to drain diode reverse t_rr
—
recovery time
Note 1. Pulse test
Typ
—
—
—
—
—
0.5
5.5
60
30
5
5
6
10
4.5
0.96
160
Max
—
—
±10
100
3.0
—
8.0
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I_D = 10 mA, V_GS = 0
I_G = ±100 µA, V_DS = 0
V_GS = ±25 V, V_DS = 0
V_DS = 200 V, V_GS = 0
V_DS = 10 V, I_D = 1 mA
V_DS = 10 V, I_D = 0.5 A *¹
I_D = 0.5 A, V_GS = 10 V *¹
V_DS = 10 V, V_GS = 0,
f = 1 MHz
V_GS = 10 V, I_D = 0.5 A,
R_L = 60 Ω
I_F = 1 A, V_GS = 0
I_F = 7 A, V_GS = 0,
di_F/dt = 100 A/µs
2