2SK1838 Datasheet, PDF (3/8 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Power vs. Temperature Derating
20
15
10
5
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
1.0
8V
6V
10 V
0.8
5V
Pulse Test
0.6
4.5 V
0.4
4V
0.2
VGS = 3.5 V
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
2SK1838(L), 2SK1838(S)
Maximum Safe Operation Area
10
3
1
0.3
0.1
DC
Ope^P_ra^W_tio=_n1(0Tcm=^1s
100
ms ^s
2⁽¹_5°^s_C^h₎^ot)
Operation in this area
is limited by R_DS (on)
0.03
Ta = 25°C
0.01
1
3
10
30 100 300
Drain to Source Voltage V _DS (V)
1000
Typical Transfer Characteristics
1.0
Pulse Test
0.8 _{VDS = 10 V}
0.6
0.4
0.2
Tc = 75°C
25°C
– 25°C
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
3