2SK1838 Datasheet, PDF (4/8 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1838(L), 2SK1838(S)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
Pulse Test
4
3
0.5 A
2
0.2 A
1
ID = 0.1 A
0
4
8
12
16
20
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Temperaure
25
20
Pulse Test
VGS = 10 V
15
ID = 0.5 A
10
0.1 A
5
0.2 A
0
– 40
0
40
80
120 160
Case Temperature Tc (°C)
Static Drain to Source on State
Resistance vs. Drain Current
50
Pulse Test
20 VGS = 10 V
10
5
2
1
0.5
0.02
0.05 0.1 0.2
0.5 1
2
Drain Current I_D (A)
Forward Transfer Admittance
vs. Drain Current
5
Pulse Test
V_DS = 10 V
2
1
Tc = – 25°C
0.5
25°C
75°C
0.2
0.1
0.05
0.02
0.05 0.1 0.2
0.5 1
2
Drain Current I_D (A)
4