2SK1335 Datasheet, PDF (5/8 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

1,000
500
Body to Drain Diode Reverse
Recovery Time
di/dt = 50 A/µs, V_GS = 0
Ta = 25°C
Pulse Test
200
100
50
20
10
0.05 0.1 0.2 0.5 1 2
5
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
500
20
400
V_DD = 50 V
16
100 V
150 V
300
12
V_GS
200 _VDS
8
100
V_DD = 150 V
100 V
50 V
I_D = 3 A 4
0
0
4
8
12 16 20
Gate Charge Qg (nc)
2SK1335(L), 2SK1335(S)
1,000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
100
Coss
10
Crss
V_GS = 10V
Pulse Test
1
0
10 20
30
40 50
Drain to Source Voltage V_DS (V)
Switching Characteristics
500
V_GS = 10 V
V_DD
=•
•
30
V
PW = 2 µs, duty < 1%
200
100
50
t_{d (off)}
20
t_r
10
t_f
t_{d (on)}
5
0.05 0.1 0.2 0.5 1 2
3
Drain Current I_D (A)
5