2SK1335 Datasheet, PDF (2/8 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1335(L), 2SK1335(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at T_C = 25°C
Symbol
V_DSS
V_GSS
I_D
I *¹
D(pulse)
I _DR
Pch*²
Tch
Tstg
Ratings
Unit
200
V
±20
V
3
A
12
A
3
A
20
W
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Drain to source breakdown
voltage
V_(BR)DSS 200
—
Gate to source breakdown
voltage
V_(BR)GSS ±20
—
Gate to source leak current
I _GSS
—
—
Zero gate voltage drain current I_DSS
—
—
Gate to source cutoff voltage V_GS(off) 2.0
—
Static drain to source on state R_DS(on) —
0.5
resistance
Forward transfer admittance |yfs|
1.5
2.3
Input capacitance
Ciss —
380
Output capacitance
Coss —
150
Reverse transfer capacitance Crss —
35
Turn-on delay time
t _d(on)
—
10
Rise time
t_r
—
27
Turn-off delay time
t _d(off)
—
30
Fall time
t_f
—
20
Body to drain diode forward V_DF
—
1.0
voltage
Body to drain diode reverse t_rr
recovery time
—
120
Note: 1. Pulse test
Max
—
—
±10
100
4.0
0.8
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I_D = 10 mA, V_GS = 0
I_G = ±100 µA, V_DS = 0
V_GS = ±16 V, V_DS = 0
V_DS = 160 V, V_GS = 0
I_D = 1 mA, V_DS = 10 V
I_D = 2 A, V_GS = 10 V *¹
I_D = 2 A, V_DS = 10 V *¹
V_DS = 10 V, V_GS = 0,
f = 1 MHz
I_D = 2 A, V_GS = 10 V,
R_L = 15 Ω
I_F = 3 A, V_GS = 0
I_F = 3 A, V_GS = 0,
di_F/dt = 50 A/µs
2