2SK1335 Datasheet, PDF (4/8 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1335(L), 2SK1335(S)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
Pulse Test
4
I_D = 5 A
3
2
1
2A
1A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Temperature
2.0
1.6
V_GS = 10 V
Pulse Test
1.2
I_D = 5 A
2A
0.8
1A
0.4
0
–40 0
40 80 120 160
Case Temperature T_C (°C)
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
2
1.0
V_GS = 10 V
0.5
15 V
0.2
0.1
0.05
0.2
0.5 1 2
5 10 20
Drain Current I_D (A)
Forward Transfer Admittance
vs. Drain Current
10
V_DS = 10 V
5 ^{Pulse Test}
–25°C
Tc = 25°C
2
75°C
1
0.5
0.2
0.1
0.05 0.1 0.2 0.5 1 2
5
Drain Current I_D (A)
4