2SK1335 Datasheet, PDF (3/8 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Power vs. Temperature Derating
30
20
10
0
50
100
150
Case Temperature T_C (°C)
Typical Output Characteristics
5
10 V
7V
4
6V
Pulse Test
5.5 V
3
5.0 V
2
1
4.5 V
V_GS = 4.0 V
0
4
8
12 16 20
Drain to Source Voltage V_DS (V)
2SK1335(L), 2SK1335(S)
Maximum Safe Operation Area
50
20
10
10 _µs
5
2
1
DC
Operation
1
(T
ms
0.5
0.2
C _{= 25°C)}
0.1
0.05
1
Ta = 25°C
3 10 30 100 300 1,000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
5
V_DS = 10 V
Pulse Test
4
3
2
1 Ta = 25°C
75°C
–25°C
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
3